Medium and Low Voltage DC-DC LED Drivers AutomotiveĭIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE.Fast and Ultra-Fast Rectifiers Automotive.Medium and Low Voltage DC-DC LED Drivers.LED Drivers for Backlights /LCD Displays.High-Performance Trench Super Barrier Rectifiers (SBRT).Learn more about how to read MOSFET datasheet parameters thanks to our series of videos dedicated to "Power MOSFET datasheet parameters". Other important parameters are intrinsic capacitances that can affect the switching times and voltage spikes, and body drain diode when device is used as power diode, like in synchronous free-wheeling operation mode. The product of R DS(on) and Q G is known as the MOSFET Figure of Merit (FOM). Q G impacts directly the efficiency (the lower, the better). Q G ( total gate charge): amount of electric charge required to the gate driver to turn on/off the device itself.
BV DSS ( breakdown voltage): maximum drain-to-source voltage that the device is able to sustain when in off state.The lower is R DS(on), the lower is the conduction loss due to power dissipation when the current is flowing. R DS(on) ( on-state resistance): electrical resistance when the device is set in on state.Like many other types of semiconductor power switches, the main parameters of a MOSFET, usually available in most datasheets, are:
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